Table of Contents Author Guidelines Submit a Manuscript
Advances in Materials Science and Engineering
Volume 2015, Article ID 470107, 6 pages
http://dx.doi.org/10.1155/2015/470107
Research Article

Resistive Switching Characteristics in TiO2/LaAlO3 Heterostructures Sandwiched in Pt Electrodes

National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Received 24 February 2015; Accepted 24 March 2015

Academic Editor: Yong Ding

Copyright © 2015 Yuyuan Cao et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, “Electrical phenomena in amorphous oxide films,” Reports on Progress in Physics, vol. 33, no. 3, pp. 1129–1191, 1970. View at Publisher · View at Google Scholar · View at Scopus
  2. M. J. Rozenberg, I. H. Inoue, and M. J. Sánchez, “Nonvolatile memory with multilevel switching: a basic model,” Physical Review Letters, vol. 92, no. 17, Article ID 178302, 2004. View at Publisher · View at Google Scholar · View at Scopus
  3. M.-C. Wu, W.-Y. Jang, C.-H. Lin, and T.-Y. Tseng, “A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture,” Semiconductor Science and Technology, vol. 27, no. 6, Article ID 065010, 2012. View at Publisher · View at Google Scholar
  4. K. P. Biju, X. Liu, J. Shin et al., “Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application,” Current Applied Physics, vol. 11, no. 4, supplement, pp. S102–S106, 2011. View at Publisher · View at Google Scholar · View at Scopus
  5. L. Goux, J. G. Lisoni, M. Jurczak, D. J. Wouters, L. Courtade, and C. Muller, “Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers,” Journal of Applied Physics, vol. 107, no. 2, Article ID 024512, 2010. View at Publisher · View at Google Scholar · View at Scopus
  6. S.-Y. Wang, C.-H. Tsai, D.-Y. Lee, C.-Y. Lin, C.-C. Lin, and T.-Y. Tseng, “Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application,” Microelectronic Engineering, vol. 88, no. 7, pp. 1628–1632, 2011. View at Publisher · View at Google Scholar · View at Scopus
  7. A. Prakash, S. Maikap, C. S. Lai et al., “Bipolar resistive switching memory using bilayer TaOx/WOx films,” Solid-State Electronics, vol. 77, pp. 35–40, 2012. View at Publisher · View at Google Scholar · View at Scopus
  8. B. J. Choi, D. S. Jeong, S. K. Kim et al., “Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition,” Journal of Applied Physics, vol. 98, no. 3, Article ID 033715, 2005. View at Publisher · View at Google Scholar · View at Scopus
  9. D. X. Chen, A. D. Li, and D. Wu, “Resistive switching in BiFeO3-based heterostructures due to ferroelectric modulation on interface Schottky barriers,” Journal of Materials Science: Materials in Electronics, vol. 25, pp. 3251–3256, 2014. View at Publisher · View at Google Scholar
  10. K. Li, Z. Wen, D. Wu, H. F. Zhai, and A. D. Li, “Bipolar resistive switching based on SrTiO3/YBa2Cu3O7 epi-layers,” Journal of Physics D: Applied Physics, vol. 46, no. 3, Article ID 035308, 2013. View at Publisher · View at Google Scholar
  11. J.-Y. Lin and C.-L. Wu, “Bipolar switching characteristics of RRAM cells with CaBi4Ti4O15 film,” Advances in Materials Science and Engineering, vol. 2014, Article ID 425085, 7 pages, 2014. View at Publisher · View at Google Scholar
  12. J. Wu, Z. Wen, D. Wu, H. Zhai, and A. Li, “Current-voltage characteristics of sol-gel derived SrZrO3 thin films for resistive memory applications,” Journal of Alloys and Compounds, vol. 509, no. 5, pp. 2050–2053, 2011. View at Publisher · View at Google Scholar · View at Scopus
  13. V. Dubost, T. Cren, C. Vaju et al., “Resistive switching at the nanoscale in the Mott insulator compound GaTa4Se8,” Nano Letters, vol. 13, no. 8, pp. 3648–3653, 2013. View at Publisher · View at Google Scholar · View at Scopus
  14. J. Sakai and M. Kurisu, “Effect of pressure on the electric-field-induced resistance switching of VO2 planar-type junctions,” Physical Review B, vol. 78, Article ID 033106, 2008. View at Publisher · View at Google Scholar
  15. R. Yang and X. M. Li, “Improvement of resistance switching properties for metal/La0.7Ca0.3MnO3/Pt devices,” Physica Status Solidi (A), vol. 208, no. 5, pp. 1041–1046, 2011. View at Publisher · View at Google Scholar
  16. Q. Wang, D. S. Shang, Z. H. Wu, D. Chen, and X. M. Li, “‘Positive’ and ‘negative’ electric-pulse-induced reversible resistance switching effect in Pr0.7Ca0.3MnO3 films,” Applied Physics A, vol. 86, no. 3, pp. 357–360, 2007. View at Publisher · View at Google Scholar
  17. D. Acharyya, A. Hazra, and P. Bhattacharyya, “A journey towards reliability improvement of TiO2 based resistive random access memory: a review,” Microelectronics Reliability, vol. 54, no. 3, pp. 541–560, 2014. View at Publisher · View at Google Scholar · View at Scopus
  18. S. K. Kim, K. M. Kim, D. S. Jeong, W. Jeon, K. J. Yoon, and C. S. Hwang, “Titanium dioxide thin films for next-generation memory devices,” Journal of Materials Research, vol. 28, no. 3, pp. 313–325, 2013. View at Publisher · View at Google Scholar · View at Scopus
  19. K. M. Kim, B. J. Choi, D. S. Jeong, and C. S. Hwang, “Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes,” Applied Physics Letters, vol. 89, no. 16, Article ID 162912, 2006. View at Publisher · View at Google Scholar
  20. B. J. Choi, S. Choi, K. M. Kim et al., “Study on the resistive switching time of TiO2 thin films,” Applied Physics Letters, vol. 89, no. 1, Article ID 012906, 2006. View at Publisher · View at Google Scholar
  21. D. Mardare and G. I. Rusu, “Comparison of the dielectric properties for doped and undoped TiO2 thin films,” Journal of Optoelectronics and Advanced Materials, vol. 6, no. 1, pp. 333–336, 2004. View at Google Scholar
  22. S. Hirose, A. Nakayama, H. Niimi, K. Kageyama, and H. Takagi, “Improvement in resistance switching and retention properties of Pt/TiO2 Schottky junction devices,” Journal of the Electrochemical Society, vol. 158, no. 3, pp. H261–H266, 2011. View at Publisher · View at Google Scholar · View at Scopus
  23. S. C. Oh, H. Y. Jung, and H. Lee, “Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film,” Journal of Applied Physics, vol. 109, no. 12, Article ID 124511, 2011. View at Publisher · View at Google Scholar
  24. Y. Li, Y. Wang, S. Liu et al., “Improvement of resistive switching uniformity in TiOx film by nitrogen annealing,” Journal of the Korean Physical Society, vol. 58, no. 3, pp. L407–L410, 2011. View at Publisher · View at Google Scholar
  25. Q. Liu, W. H. Guan, S. B. Long, R. Jia, M. Liu, and J. N. Chen, “Resistive switching memory effect of ZrO2 films with Zr+ implanted,” Applied Physics Letters, vol. 92, no. 1, Article ID 012117, 2008. View at Publisher · View at Google Scholar
  26. Y. S. Chen, B. Chen, B. Gao et al., “Understanding the intermediate initial state in TiO2-δ/La2/3Sr1/3MnO3 stack-based bipolar resistive switching devices,” Applied Physics Letters, vol. 99, no. 7, Article ID 072113, 2011. View at Publisher · View at Google Scholar
  27. H. Sim, D.-J. Seong, M. Chang, and H. Hwang, “Excellent resistance switching characteristics of Pt/single-crystal Nb-doped SrTiO3 Schottky junction,” in Proceedings of the 21st IEEE Non-Volatile Semiconductor Memory Workshop (NVSMW '06), pp. 88–89, Monterey, Calif, USA, February 2006. View at Publisher · View at Google Scholar · View at Scopus
  28. K. M. Kim, D. S. Jeong, and C. S. Hwang, “Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook,” Nanotechnology, vol. 22, no. 25, Article ID 254002, 2011. View at Publisher · View at Google Scholar
  29. Z. Xu, Y. Bando, W. L. Wang, X. D. Bai, and D. Golberg, “Real-time in situ HRTEM-resolved resistance switching of Ag2S nanoscale ionic conductor,” ACS Nano, vol. 4, no. 5, pp. 2515–2522, 2010. View at Publisher · View at Google Scholar · View at Scopus
  30. D.-H. Kwon, K. M. Kim, J. H. Jang et al., “Atomic structure of conducting nanofilaments in TiO2 resistive switching memory,” Nature Nanotechnology, vol. 5, no. 2, pp. 148–153, 2010. View at Publisher · View at Google Scholar · View at Scopus
  31. S. C. Chae, J. S. Lee, S. Kim et al., “Random circuit breaker network model for unipolar resistance switching,” Advanced Materials, vol. 20, no. 12, pp. 1154–1159, 2008. View at Publisher · View at Google Scholar
  32. W.-G. Kim and S.-W. Rhee, “Effect of post annealing on the resistive switching of TiO2 thin film,” Microelectronic Engineering, vol. 86, no. 11, pp. 2153–2156, 2009. View at Publisher · View at Google Scholar · View at Scopus
  33. K.-C. Liu, W.-H. Tzeng, K.-M. Chang et al., “Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics,” Thin Solid Films, vol. 520, no. 4, pp. 1246–1250, 2011. View at Publisher · View at Google Scholar · View at Scopus
  34. Y. D. Zhu, M. Y. Li, H. Zhou et al., “Nonvolatile bipolar resistive switching in an Ag/TiO2/Nb : SrTiO3/In device,” Journal of Physics D: Applied Physics, vol. 45, Article ID 375303, 2012. View at Publisher · View at Google Scholar
  35. J. Zhang, Q. T. Li, S. Q. Li et al., “An efficient photoanode consisting of TiO2 nanoparticle-filled TiO2 nanotube arrays for dye sensitized solar cells,” Journal of Power Sources, vol. 268, pp. 941–949, 2014. View at Publisher · View at Google Scholar
  36. W.-Y. Chang, K.-J. Cheng, J.-M. Tsai et al., “Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals,” Applied Physics Letters, vol. 95, no. 4, Article ID 042104, 2009. View at Publisher · View at Google Scholar
  37. L. Liu, D. Yu, B. Chen et al., “Improvement of reliability characteristics of TiO2-based resistive switching memory device with an inserted ZnO layer,” Japanese Journal of Applied Physics, vol. 51, no. 10, Article ID 101101, 2012. View at Publisher · View at Google Scholar