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Advances in Materials Science and Engineering
Volume 2015, Article ID 537163, 5 pages
Research Article

Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates

Department of Electro-Optical Engineering, National University of Technology, 1, Sec. 3, Chung-Hsiao E. Road, Taipei 106, Taiwan

Received 15 April 2015; Accepted 31 August 2015

Academic Editor: Charles C. Sorrell

Copyright © 2015 Lung-Chien Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This study concerns the characteristics of white GaN-based light-emitting diode (LED) on flexible substrates. The thin film GaN-based blue LEDs were directly transferred from sapphire onto the flexible polydimethylsiloxane (PDMS) substrates by laser lift-off (LLO) process. The PDMS substrates were incorporated 10–40% cerium doped yttrium aluminum garnet phosphor, YAG:Ce3+, and formed the GaN-based white LEDs. The white LEDs prepared by the GaN-based LEDs on the YAG-PDMS substrates reveal one peak at 470 nm corresponding to the emission of the GaN-based LED and a broadband included five weak peaks caused by YAG:Ce3+ phosphors.