Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates

Figure 1

(a) Surface of the n-GaN epitaxial layer after KOH solution etching and (b) GaN-based LED after LLO process was mounted on flexible YAG-PDMS substrate.

(a)

(b)