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Advances in Materials Science and Engineering
Volume 2015, Article ID 691403, 9 pages
http://dx.doi.org/10.1155/2015/691403
Research Article

A Split Island Layout Style of Butting/Inserted Substrate Pickups for NMOSFET ESD Reliability

1Department of Electronics Engineering, Chien Hsin University of Science and Technology, No. 229, Chien-Hsin Road, Zhongli District, Taoyuan City 320, Taiwan
2Department of Electronic Engineering, Ming Chuan University, No. 5 De Ming Road, Gui-Shan District, Taoyuan City 333, Taiwan
3ProbeLeader Co. Ltd., Hsinchu City 300, Taiwan
4Field Application Engineering Department, Innolux Corp., Miola County 350, Taiwan

Received 9 February 2015; Accepted 4 May 2015

Academic Editor: Rui Wang

Copyright © 2015 Chih-Yao Huang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Chih-Yao Huang, Fu-Chien Chiu, Bo-Chen Lin, and Po-Kung Song, “A Split Island Layout Style of Butting/Inserted Substrate Pickups for NMOSFET ESD Reliability,” Advances in Materials Science and Engineering, vol. 2015, Article ID 691403, 9 pages, 2015. https://doi.org/10.1155/2015/691403.