A Split Island Layout Style of Butting/Inserted Substrate Pickups for NMOSFET ESD Reliability

<div>(a) The holding voltage and on-resistance comparison among the 1.8 V GGNMOS and various butting/inserted pickup styles with respect to the pickup length. (b) The holding voltage and on-resistance comparison among the 3.3 V GGNMOS and various butting/inserted pickup styles with respect to the pickup length.</div>

Advances in Materials Science and Engineering

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Figure 5

Figure 5: A Split Island Layout Style of Butting/Inserted Substrate Pickups for NMOSFET ESD Reliability 