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Advances in Materials Science and Engineering
Volume 2015, Article ID 847191, 7 pages
Research Article

A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy

1Department of Mechanical Engineering, National Pingtung University of Science & Technology, Pingtung 91201, Taiwan
2Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
3Department of Materials Engineering, National Pingtung University of Science & Technology, Pingtung 91201, Taiwan

Received 23 October 2014; Revised 29 November 2014; Accepted 28 December 2014

Academic Editor: Ke Fu Yao

Copyright © 2015 Ruei-Cheng Lin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3 substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2 casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed. When the annealing temperature was at 500°C, the Ni-Cr-Si-Al-Ta films crystallized into Al0.9Ni4.22, Cr2Ta, and Ta5Si3 phases. The Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300°C which exhibited the higher resistivity 2215 -cm with −10 ppm/°C of temperature coefficient of resistance (TCR).