Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal

<div>Resistivity of the TlBr detector from crystal middle region (slice ~ 0.65 mm thick) as a function of the repetition number of Bridgman growth. The bar error represents one standard deviation (<svg height="8.8423pt" id="M195" style="vertical-align:-0.2064009pt" version="1.1" viewbox="-0.0498162 -8.6359 32.2343 8.8423" width="32.2343pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M822 650H589L583 622C660 617 677 607 674 561C672 534 664 481 647 390L600 137H596L273 650H126L120 622C176 620 194 615 207 594C221 571 225 557 214 504L161 257C141 166 129 112 121 85C108 42 83 30 29 28L23 0H260L266 28C193 33 173 42 176 89C178 122 186 172 202 255L256 527H259L583 -8H612L690 390C708 481 720 535 728 558C744 603 756 619 816 622L822 650Z" id="g113-79"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="839" vert-adv-y="839"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,14.542,0)"><path d="M535 323V373H52V323H535ZM535 138V188H52V138H535Z" id="g117-34"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="587" vert-adv-y="587"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,25.805,0)"><path d="M285 378C315 398 338 416 353 432C373 451 384 474 384 503C384 579 325 635 236 635H235C182 635 136 610 108 579L65 516L85 496C110 533 150 575 205 575C258 575 300 543 300 481C300 407 232 369 141 339L147 310C163 315 188 321 211 321C268 321 338 284 338 192C338 94 288 40 217 40C160 40 119 68 93 91C85 98 77 97 69 91C60 84 47 71 46 58C44 46 48 35 62 22C75 10 116 -12 162 -12C234 -12 424 62 424 224C424 297 373 359 285 376V378Z" id="g113-52"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="480" vert-adv-y="480"></glyph.data></g></svg> samples).</div>

Advances in Materials Science and Engineering

fig7

Figure 7

Figure 7: Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal 