Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal

Table 3

Resistivity values for TlBr detectors prepared from the crystal grown once, twice, and three times by the repeated Bridgman method. The samples used are from crystal middle region.

Bridgman growth	Resistivity (10^9 Ωcm)
	Salt 1	Salt 2
First	11.3 ± 9.5	2.17 ± 0.30
Second	47.5 ± 13.4	3.45 ± 0.45
Third	67.5 ± 21.9	6.72 ± 0.43