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Advances in Materials Science and Engineering
Volume 2017, Article ID 2031631, 7 pages
https://doi.org/10.1155/2017/2031631
Research Article

Theoretical Study of High-Frequency Response of InGaAs/AlAs Double-Barrier Nanostructures

1Department of Condensed Matter Physics, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Sh. 31, Moscow 115409, Russia
2Laboratory of Computational Design of Nanostructures, Nanodevices and Nanotechnologies, Research Institute for the Development of Scientific and Educational Potential of Youth, Aviatorov Str. 14/55, Moscow 119620, Russia

Correspondence should be addressed to Mikhail M. Maslov; moc.liamg@volsam.ekim

Received 2 May 2017; Accepted 5 June 2017; Published 6 July 2017

Academic Editor: Francesco Ruffino

Copyright © 2017 Konstantin S. Grishakov et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The presented article contains the numerical calculations of the InGaAs/AlAs resonant tunneling diode’s (RTD) response to the AC electric field of a wide range of amplitudes and frequencies. These calculations have been performed within the coherent quantum-mechanical model that is based on the solution of the time-dependent Schrödinger equation with exact open boundary conditions. It is shown that as the field amplitude increases, at high frequencies, where (Γ is the width of the resonant energy level), the active current can reach high values comparable to the direct current value in resonance. This indicates the implementation of the quantum regime for RTD when radiative transitions are between quasi-energetic levels and the resonant energy level. Moreover, there is an excitement of higher quasi-energetic levels in AC electric fields, which in particular results in a slow droop of the active current as the field amplitude increases. It also results in potentially abrupt changes of the operating point position by the value. This makes it possible to achieve relatively high output powers of InGaAs/AlAs RTD having an order of 105 W/cm2 at high frequencies.