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Advances in Materials Science and Engineering
Volume 2017, Article ID 2031631, 7 pages
https://doi.org/10.1155/2017/2031631
Research Article

Theoretical Study of High-Frequency Response of InGaAs/AlAs Double-Barrier Nanostructures

1Department of Condensed Matter Physics, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Sh. 31, Moscow 115409, Russia
2Laboratory of Computational Design of Nanostructures, Nanodevices and Nanotechnologies, Research Institute for the Development of Scientific and Educational Potential of Youth, Aviatorov Str. 14/55, Moscow 119620, Russia

Correspondence should be addressed to Mikhail M. Maslov; moc.liamg@volsam.ekim

Received 2 May 2017; Accepted 5 June 2017; Published 6 July 2017

Academic Editor: Francesco Ruffino

Copyright © 2017 Konstantin S. Grishakov et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Konstantin S. Grishakov, Vladimir F. Elesin, Mikhail M. Maslov, and Konstantin P. Katin, “Theoretical Study of High-Frequency Response of InGaAs/AlAs Double-Barrier Nanostructures,” Advances in Materials Science and Engineering, vol. 2017, Article ID 2031631, 7 pages, 2017. https://doi.org/10.1155/2017/2031631.