Theoretical Study of High-Frequency Response of InGaAs/AlAs Double-Barrier Nanostructures

<div>Maximum absolute value of the negative active current <svg height="13.2475pt" id="M177" style="vertical-align:-3.29111pt" version="1.1" viewbox="-0.0498162 -9.95639 17.2528 13.2475" width="17.2528pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M429 650H175L169 622C251 614 259 612 244 532L174 152C163 91 152 37 135 -6C109 -72 67 -101 23 -113L33 -144C45 -143 73 -134 102 -119C186 -76 229 -1 254 133L327 532C341 609 347 613 423 622L429 650Z" id="g113-75"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="452" vert-adv-y="452" xpluscharwidth="5.876"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,5.031,3.132)"><path d="M387 400C387 425 348 451 303 451C247 451 176 414 132 376C69 322 24 228 24 148C24 43 74 -12 147 -12C211 -12 301 33 363 103L346 128C319 99 249 51 193 51C148 51 112 84 112 165C112 230 130 287 154 330C170 359 199 400 243 400C277 400 304 383 326 354C333 345 343 343 354 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left <svg height="9.39034pt" id="M178" style="vertical-align:-3.42943pt" version="1.1" viewbox="-0.0498162 -5.96091 7.65486 9.39034" width="7.65486pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M556 393C556 426 537 448 514 448C496 448 478 435 471 420C468 414 462 401 466 394C473 382 480 368 480 346C480 268 392 143 338 67H336C329 163 319 253 309 330S286 448 254 448C215 448 160 383 127 337L143 311C167 344 200 373 208 373S222 365 229 320C246 214 264 66 268 -20C219 -83 131 -171 17 -239L25 -261L137 -235C248 -110 273 -79 335 8C384 77 481 215 520 287C544 332 556 363 556 393Z" id="g113-122"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="579" vert-adv-y="579" xpluscharwidth="7.527"></glyph.data></g></svg> axis) and operating point position (red circles, right <svg height="9.39034pt" id="M179" style="vertical-align:-3.42943pt" version="1.1" viewbox="-0.0498162 -5.96091 7.65486 9.39034" width="7.65486pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M556 393C556 426 537 448 514 448C496 448 478 435 471 420C468 414 462 401 466 394C473 382 480 368 480 346C480 268 392 143 338 67H336C329 163 319 253 309 330S286 448 254 448C215 448 160 383 127 337L143 311C167 344 200 373 208 373S222 365 229 320C246 214 264 66 268 -20C219 -83 131 -171 17 -239L25 -261L137 -235C248 -110 273 -79 335 8C384 77 481 215 520 287C544 332 556 363 556 393Z" id="g113-122"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="579" vert-adv-y="579" xpluscharwidth="7.527"></glyph.data></g></svg> axis) as a function of amplitude of the AC electric field at the frequency <svg height="9.49473pt" id="M180" style="vertical-align:-0.2063999pt" version="1.1" viewbox="-0.0498162 -9.28833 42.9603 9.49473" width="42.9603pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M499 88L487 113C459 86 422 65 413 65C403 65 403 74 409 98L461 318C487 426 460 448 431 448C408 448 383 441 352 424C305 398 223 344 157 257H155L210 518H371L383 557H218L243 674C249 702 249 712 240 712C227 712 170 680 87 673L82 648H117C155 648 162 644 150 590L143 557H62L51 518H135L23 -4L30 -12C55 -4 81 3 105 8C113 53 131 150 143 187C199 281 323 387 372 387C390 387 393 369 380 311L328 86C313 19 319 -12 347 -12C379 -12 442 24 499 88Z" id="g113-95"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="516" vert-adv-y="516" xpluscharwidth="6.708"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,6.708,0)"><path d="M615 290C615 392 563 448 529 448C511 448 491 441 484 434L483 425C518 400 546 349 546 273C546 158 504 46 417 46C381 46 356 77 356 142C356 184 380 293 392 334L387 340L307 323C305 288 296 228 287 188C265 94 221 52 180 52C144 52 112 89 112 171C112 278 164 372 241 430L226 454C106 394 23 288 23 155C23 40 79 -12 139 -12C184 -12 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Advances in Materials Science and Engineering

fig10

Figure 10

Figure 10: Theoretical Study of High-Frequency Response of InGaAs/AlAs Double-Barrier Nanostructures 