Theoretical Study of High-Frequency Response of InGaAs/AlAs Double-Barrier Nanostructures

Figure 8

Maximum absolute value of the negative active current (solid line, left axis) and its position relative to the energy of the resonant level (dashed line, right axis) as a function of amplitude of the AC electric field for RTD heterostructure number 2 at the following frequencies: (black line) and (red line).