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Advances in Materials Science and Engineering
Volume 2017 (2017), Article ID 2676432, 6 pages
Review Article

Formation and Physical Properties of h-BN Atomic Layers: A First-Principles Density-Functional Study

Department of Physics, Tokyo Institute of Technology, Tokyo, Japan

Correspondence should be addressed to Yoshitaka Fujimoto

Received 15 June 2017; Accepted 20 July 2017; Published 22 August 2017

Academic Editor: Achim Trampert

Copyright © 2017 Yoshitaka Fujimoto. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Hexagonal boron nitride (h-BN) atomic layers have attracted much attention as a potential device material for future nanoelectronics, optoelectronics, and spintronics applications. This review aims to describe the recent works of the first-principles density-functional study on h-BN layers. We show physical properties induced by introduction of various kinds of defects in h-BN layers. We further discuss the relationship among the defect size, the strain, and the magnetic as well as the electronic properties.