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Advances in Materials Science and Engineering
Volume 2017, Article ID 6590606, 8 pages
Research Article

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand

Correspondence should be addressed to Nathaporn Promros; pj.iaduyk@sormorp_nropahtan

Received 17 October 2016; Revised 2 January 2017; Accepted 29 January 2017; Published 2 March 2017

Academic Editor: Mikhael Bechelany

Copyright © 2017 Phongsaphak Sittimart et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In this study, n-type β-FeSi2/p-type Si heterojunctions, inside which n-type β-FeSi2 films were epitaxially grown on p-type Si(111) substrates, were created using radio frequency magnetron sputtering at a substrate temperature of 560°C and Ar pressure of  Pa. The heterojunctions were measured for forward and reverse dark current density-voltage curves as a function of temperature ranging from 300 down to 20 K for computation of heterojunction parameters using the thermionic emission (TE) theory and Cheung’s and Norde’s methods. Computation using the TE theory showed that the values of ideality factor () were 1.71 at 300 K and 16.83 at 20 K, while the barrier height () values were 0.59 eV at 300 K and 0.06 eV at 20 K. Both of the and values computed using the TE theory were in agreement with those computed using Cheung’s and Norde’s methods. The values of series resistance () computed at 300 K and 20 K by Norde’s method were 10.93 Ω and 0.15 MΩ, respectively, which agreed with the values found through computation by Cheung’s method. The dramatic increment of value at low temperatures was likely attributable to the increment of value at low temperatures.