Advances in Materials Science and Engineering
Volume 2017 (2017), Article ID 6590606, 8 pages
https://doi.org/10.1155/2017/6590606
Research Article
Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering
Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand
Correspondence should be addressed to Nathaporn Promros; pj.iaduyk@sormorp_nropahtan
Received 17 October 2016; Revised 2 January 2017; Accepted 29 January 2017; Published 2 March 2017
Academic Editor: Mikhael Bechelany
Copyright © 2017 Phongsaphak Sittimart et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Linked References
- T. Sunohara, K. Kobayashi, and T. Suemasu, “Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy,” Thin Solid Films, vol. 508, no. 1-2, pp. 371–375, 2006. View at Publisher · View at Google Scholar
- D. Leong, M. Harry, K. J. Reeson, and K. P. Homewood, “A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm,” Nature, vol. 387, no. 6634, pp. 686–688, 1997. View at Publisher · View at Google Scholar · View at Scopus
- T. Suemasu, Y. Ugajin, S. Murase, T. Sunohara, and M. Suzuno, “Photoluminescence decay time and electroluminescence of p-Si/β-FeSi2 particles/n-Si and p-Si/β-FeSi2 film/n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy,” Journal of Applied Physics, vol. 101, no. 12, Article ID 124506, 2007. View at Publisher · View at Google Scholar
- B. Tatar, K. Kutlu, and M. Ürgen, “Synthesis of β-FeSi2/Si heterojunctions for photovoltaic applications by unbalanced magnetron sputtering,” Thin Solid Films, vol. 516, no. 1, pp. 13–16, 2007. View at Publisher · View at Google Scholar · View at Scopus
- M. Z. Hossain, T. Mimura, N. Miura, and S.-I. Uekusa, “Surface morphology and luminescence characterization of β-FeSi2 thin films prepared by pulsed laser deposition,” Applied Surface Science, vol. 256, no. 4, pp. 1227–1231, 2009. View at Publisher · View at Google Scholar · View at Scopus
- M. C. Bost and J. E. Mahan, “A clarification of the index of refraction of beta-iron disilicide,” Journal of Applied Physics, vol. 64, no. 4, pp. 2034–2037, 1988. View at Publisher · View at Google Scholar · View at Scopus
- N. Promros, K. Yamashita, R. Iwasaki, and T. Yoshitake, “Effects of hydrogen passivation on near-infrared photodetection of n-type β-FeSi2/p-type Si heterojunction photodiodes,” Japanese Journal of Applied Physics, vol. 51, no. 10R, Article ID 108006, 2012. View at Google Scholar
- N. Promros, K. Yamashita, S. Izumi, R. Iwasaki, M. Shaban, and T. Yoshitake, “Near-infrared photodetection of n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions at low temperatures,” Japanese Journal of Applied Physics, vol. 51, no. 9S2, Article ID 09MF02, 2012. View at Publisher · View at Google Scholar
- M. Milosavljević, L. Wong, M. Lourenço et al., “Correlation of structural and optical properties of sputtered FeSi2 thin films,” Japanese Journal of Applied Physics, vol. 49, no. 8, Article ID 081401, 2010. View at Publisher · View at Google Scholar · View at Scopus
- J. E. Mahan, K. M. Geib, G. Y. Robinson et al., “Epitaxial films of semiconducting FeSi2 on (001) silicon,” Applied Physics Letters, vol. 56, no. 21, pp. 2126–2128, 1990. View at Publisher · View at Google Scholar · View at Scopus
- Z. Yang and K. P. Homewood, “Effect of annealing temperature on optical and structural properties of ion-beam-synthesized semiconducting FeSi2 layers,” Journal of Applied Physics, vol. 79, no. 8, pp. 4312–4317, 1996. View at Publisher · View at Google Scholar
- M. Tanaka, Y. Kumagai, T. Suemasu, and F. Hasegawa, “Reactive deposition epitaxial growth of β-FeSi2 layers on Si(001),” Applied Surface Science, vol. 117-118, pp. 303–307, 1997. View at Publisher · View at Google Scholar · View at Scopus
- M. Shaban, K. Nomoto, K. Nakashima, and T. Yoshitake, “Low-temperature annealing of n-type β-FeSi2/p-type Si heterojunctions,” Japanese Journal of Applied Physics, vol. 47, no. 5, pp. 3444–3446, 2008. View at Publisher · View at Google Scholar · View at Scopus
- K. Wunstel and P. Wagner, “Interstitial iron and iron-acceptor pairs in silicon,” Applied Physics A Solids and Surfaces, vol. 27, no. 4, pp. 207–212, 1982. View at Publisher · View at Google Scholar
- N. Promros, R. Baba, M. Takahara et al., “Epitaxial growth of β-FeSi2 thin films on Si(111) substrates by radio frequency magnetron sputtering and their application to near-infrared photodetection,” Japanese Journal of Applied Physics, vol. 55, no. 6S2, Article ID 06HC03, 2016. View at Publisher · View at Google Scholar
- D. A. Aldemir, M. Esen, A. Kökce, S. Karataş, and A. F. Özdemir, “Analysis of current–voltage and capacitance–voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer,” Thin Solid Films, vol. 519, no. 18, pp. 6004–6009, 2011. View at Publisher · View at Google Scholar
- S. Duman, B. Gürbulak, S. Doğan, and A. Türüt, “Electrical characteristics and inhomogeneous barrier analysis of Au–Be/p-InSe:Cd Schottky barrier diodes,” Microelectronic Engineering, vol. 86, no. 1, pp. 106–110, 2009. View at Publisher · View at Google Scholar
- S. K. Cheung and N. W. Cheung, “Extraction of Schottky diode parameters from forward current‐voltage characteristics,” Applied Physics Letters, vol. 49, no. 2, pp. 85–87, 1986. View at Publisher · View at Google Scholar
- H. Norde, “A modified forward I‐V plot for Schottky diodes with high series resistance,” Journal of Applied Physics, vol. 50, no. 7, pp. 5052–5053, 1979. View at Publisher · View at Google Scholar
- S. Sönmezoğlu, “Current transport mechanism of n-TiO2/p-ZnO heterojunction diode,” Applied Physics Express, vol. 4, no. 10, Article ID 104104, 2011. View at Publisher · View at Google Scholar
- F. Ö. Kuş, T. Serin, and N. Serin, “Current transport mechanisms of n-ZnO/p-CuO heterojunctions,” Journal of Optoelectronics and Advanced Materials, vol. 11, no. 11, pp. 1855–1859, 2009. View at Google Scholar · View at Scopus
- A. A. Farag, I. S. Yahia, T. Wojtowicz, and G. Karczewski, “Influence of temperature and illumination on the electrical properties of p-ZnTe/n-CdTe heterojunction grown by molecular beam epitaxy,” Journal of Physics D: Applied Physics, vol. 43, no. 21, Article ID 215102, 2010. View at Publisher · View at Google Scholar
- H. S. Hafez, I. S. Yahia, G. B. Sakr, M. S. A. Abdel-Mottaleb, and F. Yakuphanoglu, “Extraction of the DSC parameters based titanium under dark and illumination condition,” Advances in Materials and Corrosion, vol. 1, no. 1, pp. 8–13, 2012. View at Google Scholar
- D. Song and B. Guo, “Electrical properties and carrier transport mechanisms of n-ZnO/SiOx/n-Si isotype heterojunctions with native or thermal oxide interlayers,” Journal of Physics D: Applied Physics, vol. 42, no. 2, Article ID 025103, 2009. View at Publisher · View at Google Scholar
- M. Caglar and F. Yakuphanoglu, “Fabrication and electrical characterization of flower-like CdO/p-Si heterojunction diode,” Journal of Physics D: Applied Physics, vol. 42, no. 4, Article ID 045102, 2009. View at Publisher · View at Google Scholar
- T. Serin, S. Gürakar, N. Serin, N. Yıldırım, and F. Özyurt Kuş, “Current flow mechanism in Cu2O/p-Si heterojunction prepared by chemical method,” Journal of Physics D: Applied Physics, vol. 42, no. 22, Article ID 225108, 2009. View at Publisher · View at Google Scholar
- Y. P. Song, R. L. Van Meirhaeghe, W. H. Laflère, and F. Cardon, “On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers,” Solid State Electronics, vol. 29, no. 6, pp. 633–638, 1986. View at Publisher · View at Google Scholar · View at Scopus
- A. M. Rodrigues, “Extraction of Schottky diode parameters from current-voltage data for a chemical-vapor-deposited diamond/silicon structure over a wide temperature range,” Journal of Applied Physics, vol. 103, no. 8, Article ID 083708, 2008. View at Publisher · View at Google Scholar
- O. F. Yuksel, “Temperature dependence of current-voltage characteristics of Al/p-Si (1 0 0) Schottky barrier diodes,” Physica B, vol. 404, no. 14-15, pp. 1993–1997, 2009. View at Publisher · View at Google Scholar
- S. Baturay, Y. S. Ocak, and D. Kaya, “The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions,” Journal of Alloys and Compounds, vol. 645, pp. 29–33, 2015. View at Publisher · View at Google Scholar · View at Scopus
- N. Promros, R. Baba, H. Kishimoto et al., “Characterization of n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions at low temperatures,” Journal of Nanoelectronics and Optoelectronics, vol. 11, no. 5, pp. 579–584, 2016. View at Publisher · View at Google Scholar
- M. Shaban, K. Kawai, N. Promros, and T. Yoshitake, “n-Type nanocrystalline-FeSi2/p-type Si heterojunction photodiodes prepared at room temperature,” IEEE Electron Device Letters, vol. 31, no. 12, pp. 1428–1430, 2010. View at Publisher · View at Google Scholar · View at Scopus
- M. Shaban, S. Izumi, K. Nomoto, and T. Yoshitake, “n-Type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature,” Applied Physics Letters, vol. 95, no. 16, Article ID 162102, 2009. View at Google Scholar
- S. Izumi, M. Shaban, N. Promros, K. Nomoto, and T. Yoshitake, “Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures,” Applied Physics Letters, vol. 102, no. 3, Article ID 032107, 2013. View at Publisher · View at Google Scholar · View at Scopus
- N. Promros, K. Yamashita, C. Li et al., “n-Type nanocrystalline FeSi2/intrinsic Si/p-type Si heterojunction photodiodes fabricated by facing-target direct-current sputtering,” Japanese Journal of Applied Physics, vol. 51, no. 2R, Article ID 021301, 2012. View at Publisher · View at Google Scholar
- A. Zkria, M. Shaban, T. Hanada, N. Promros, and T. Yoshitake, “Current transport mechanisms in n-type ultrananocrystalline diamond/p-type Si heterojunctions,” Journal of Nanoscience and Nanotechnology, vol. 16, no. 12, pp. 12749–12753, 2016. View at Publisher · View at Google Scholar