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Advances in Materials Science and Engineering
Volume 2017 (2017), Article ID 6590606, 8 pages
https://doi.org/10.1155/2017/6590606
Research Article

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

Phongsaphak Sittimart, Adison Nopparuchikun, and Nathaporn Promros

Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand

Correspondence should be addressed to Nathaporn Promros; pj.iaduyk@sormorp_nropahtan

Received 17 October 2016; Revised 2 January 2017; Accepted 29 January 2017; Published 2 March 2017

Academic Editor: Mikhael Bechelany

Copyright © 2017 Phongsaphak Sittimart et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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