Frequency Dependence of <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.2723999pt" id="M1" height="11.6718pt" version="1.1" viewBox="-0.0657574 -11.3994 29.9813 11.6718" width="29.9813pt"><g transform="matrix(.017,0,0,-0.017,0,0)"><path id="g113-68" d="M645 631C614 643 545 666 457 666C215 666 23 519 23 283C23 90 158 -16 337 -16C412 -16 489 2 522 10C543 39 590 127 606 167L580 181C519 89 459 18 348 18C201 18 122 136 122 287C122 464 244 632 435 632C544 632 602 595 608 472L639 475C643 526 645 581 645 631Z"/></g><g transform="matrix(.017,0,0,-0.017,11.463,0)"><path id="g190-46" d="M300 253H71L57 198H286L300 253Z"/></g><g transform="matrix(.017,0,0,-0.017,17.596,0)"><path id="g113-87" d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z"/></g></svg> Characteristics of MOS Capacitors Containing Nanosized High-<i>κ</i> Ta<sub>2</sub>O<sub>5</sub> Dielectrics

<div><svg height="13.9365pt" id="M66" style="vertical-align:-5.3006pt" version="1.1" viewbox="-0.0498162 -8.6359 14.1267 13.9365" width="14.1267pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M645 631C614 643 545 666 457 666C215 666 23 519 23 283C23 90 158 -16 337 -16C412 -16 489 2 522 10C543 39 590 127 606 167L580 181C519 89 459 18 348 18C201 18 122 136 122 287C122 464 244 632 435 632C544 632 602 595 608 472L639 475C643 526 645 581 645 631Z" id="g113-68"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="668" vert-adv-y="668"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,8.619,3.132)"><path d="M173 382V461C125 442 68 425 25 418V390C88 382 92 382 92 317V-127C92 -191 84 -199 18 -204V-235H259V-204C180 -196 173 -192 173 -120V7C188 -1 212 -11 243 -12C375 12 495 109 495 261C495 361 427 451 316 451C303 451 283 446 266 435L173 382ZM173 345C200 365 243 388 274 388C346 388 409 329 409 222C409 111 353 40 266 40C231 40 196 56 173 79V345Z" id="g58-110"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="534" vert-adv-y="534"></glyph.data></g></svg>-<i>V</i> and <svg height="13.9365pt" id="M67" style="vertical-align:-5.3006pt" version="1.1" viewbox="-0.0498162 -8.6359 13.5917 13.9365" width="13.5917pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M610 18C585 26 567 34 540 68C517 97 499 128 476 171C452 215 425 276 413 304C496 332 570 394 570 494C570 555 545 595 509 619S419 650 364 650H139L133 622C216 615 219 612 203 527L129 132C112 40 105 36 23 28L17 0H279L285 28C199 34 194 40 211 132L239 284H284C320 284 334 275 351 236C374 182 394 140 420 93C459 23 495 -1 592 -8H600L610 18ZM480 485C480 424 449 372 403 342C374 323 338 316 293 316H245L291 562C296 589 301 601 311 608S337 618 358 618C432 618 480 575 480 485Z" id="g113-83"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="627" vert-adv-y="627"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,8.086,3.132)"><path d="M173 382V461C125 442 68 425 25 418V390C88 382 92 382 92 317V-127C92 -191 84 -199 18 -204V-235H259V-204C180 -196 173 -192 173 -120V7C188 -1 212 -11 243 -12C375 12 495 109 495 261C495 361 427 451 316 451C303 451 283 446 266 435L173 382ZM173 345C200 365 243 388 274 388C346 388 409 329 409 222C409 111 353 40 266 40C231 40 196 56 173 79V345Z" id="g58-110"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="534" vert-adv-y="534"></glyph.data></g></svg>-<i>V</i> characteristics for a W gate.</div>

Advances in Materials Science and Engineering

fig16

Figure 16

Figure 16: Frequency Dependence of <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.2723999pt" id="M1" height="11.6718pt" version="1.1" viewBox="-0.0657574 -11.3994 29.9813 11.6718" width="29.9813pt"><g transform="matrix(.017,0,0,-0.017,0,0)"><path id="g113-68" d="M645 631C614 643 545 666 457 666C215 666 23 519 23 283C23 90 158 -16 337 -16C412 -16 489 2 522 10C543 39 590 127 606 167L580 181C519 89 459 18 348 18C201 18 122 136 122 287C122 464 244 632 435 632C544 632 602 595 608 472L639 475C643 526 645 581 645 631Z"/></g><g transform="matrix(.017,0,0,-0.017,11.463,0)"><path id="g190-46" d="M300 253H71L57 198H286L300 253Z"/></g><g transform="matrix(.017,0,0,-0.017,17.596,0)"><path id="g113-87" d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z"/></g></svg> Characteristics of MOS Capacitors Containing Nanosized High-<i>κ</i> Ta<sub>2</sub>O<sub>5</sub> Dielectrics 

Advances in Materials Science and Engineering

Frequency Dependence of Characteristics of MOS Capacitors Containing Nanosized High-κ Ta2O5 Dielectrics

Figure 16

Frequency Dependence of Characteristics of MOS Capacitors Containing Nanosized High-κ Ta₂O₅ Dielectrics