Frequency Dependence of <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.2723999pt" id="M1" height="11.6718pt" version="1.1" viewBox="-0.0657574 -11.3994 29.9813 11.6718" width="29.9813pt"><g transform="matrix(.017,0,0,-0.017,0,0)"><path id="g113-68" d="M645 631C614 643 545 666 457 666C215 666 23 519 23 283C23 90 158 -16 337 -16C412 -16 489 2 522 10C543 39 590 127 606 167L580 181C519 89 459 18 348 18C201 18 122 136 122 287C122 464 244 632 435 632C544 632 602 595 608 472L639 475C643 526 645 581 645 631Z"/></g><g transform="matrix(.017,0,0,-0.017,11.463,0)"><path id="g190-46" d="M300 253H71L57 198H286L300 253Z"/></g><g transform="matrix(.017,0,0,-0.017,17.596,0)"><path id="g113-87" d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z"/></g></svg> Characteristics of MOS Capacitors Containing Nanosized High-<i>κ</i> Ta<sub>2</sub>O<sub>5</sub> Dielectrics

<div>Comparison of <svg height="11.9316pt" id="M36" style="vertical-align:-3.2957pt" version="1.1" viewbox="-0.0498162 -8.6359 12.6835 11.9316" width="12.6835pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M645 631C614 643 545 666 457 666C215 666 23 519 23 283C23 90 158 -16 337 -16C412 -16 489 2 522 10C543 39 590 127 606 167L580 181C519 89 459 18 348 18C201 18 122 136 122 287C122 464 244 632 435 632C544 632 602 595 608 472L639 475C643 526 645 581 645 631Z" id="g113-68"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="668" vert-adv-y="668"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,8.619,3.132)"><path d="M327 325C324 350 312 408 304 433C283 442 256 451 213 451C120 451 59 391 59 320C59 243 125 210 188 181C237 158 266 136 266 93C266 52 231 24 195 24C134 24 93 81 74 148L42 143C42 106 51 37 59 23C78 8 125 -12 177 -12C257 -12 345 35 345 127C345 198 292 234 216 264C171 283 131 305 131 348C131 387 156 416 195 416C243 416 277 378 297 317L327 325Z" id="g58-113"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="376" vert-adv-y="376"></glyph.data></g></svg>-<i>V</i> with <svg height="13.9365pt" id="M37" style="vertical-align:-5.3006pt" version="1.1" viewbox="-0.0498162 -8.6359 14.1267 13.9365" width="14.1267pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M645 631C614 643 545 666 457 666C215 666 23 519 23 283C23 90 158 -16 337 -16C412 -16 489 2 522 10C543 39 590 127 606 167L580 181C519 89 459 18 348 18C201 18 122 136 122 287C122 464 244 632 435 632C544 632 602 595 608 472L639 475C643 526 645 581 645 631Z" id="g113-68"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="668" vert-adv-y="668"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,8.619,3.132)"><path d="M173 382V461C125 442 68 425 25 418V390C88 382 92 382 92 317V-127C92 -191 84 -199 18 -204V-235H259V-204C180 -196 173 -192 173 -120V7C188 -1 212 -11 243 -12C375 12 495 109 495 261C495 361 427 451 316 451C303 451 283 446 266 435L173 382ZM173 345C200 365 243 388 274 388C346 388 409 329 409 222C409 111 353 40 266 40C231 40 196 56 173 79V345Z" id="g58-110"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="534" vert-adv-y="534"></glyph.data></g></svg>-<i>V</i> at two frequencies: 100 kHz (a) and 1 MHz (b) in the case of an Al gate.</div>

Advances in Materials Science and Engineering

fig9

Figure 9

Figure 9: Frequency Dependence of <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.2723999pt" id="M1" height="11.6718pt" version="1.1" viewBox="-0.0657574 -11.3994 29.9813 11.6718" width="29.9813pt"><g transform="matrix(.017,0,0,-0.017,0,0)"><path id="g113-68" d="M645 631C614 643 545 666 457 666C215 666 23 519 23 283C23 90 158 -16 337 -16C412 -16 489 2 522 10C543 39 590 127 606 167L580 181C519 89 459 18 348 18C201 18 122 136 122 287C122 464 244 632 435 632C544 632 602 595 608 472L639 475C643 526 645 581 645 631Z"/></g><g transform="matrix(.017,0,0,-0.017,11.463,0)"><path id="g190-46" d="M300 253H71L57 198H286L300 253Z"/></g><g transform="matrix(.017,0,0,-0.017,17.596,0)"><path id="g113-87" d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z"/></g></svg> Characteristics of MOS Capacitors Containing Nanosized High-<i>κ</i> Ta<sub>2</sub>O<sub>5</sub> Dielectrics 

Advances in Materials Science and Engineering

Frequency Dependence of Characteristics of MOS Capacitors Containing Nanosized High-κ Ta2O5 Dielectrics

Figure 9

Frequency Dependence of Characteristics of MOS Capacitors Containing Nanosized High-κ Ta₂O₅ Dielectrics