Frequency Dependence of Characteristics of MOS Capacitors Containing Nanosized High-κ Ta₂O₅ Dielectrics

Table 1

Parameters used in the theoretical calculations shown in Figure 4.

Gate				(nF)	(nF)
Al	160	6	7.0	9.8	3.1
W	160	6	7.5	11.0	2.9
Au	200	60	70	7.9	2.3