Frequency Dependence of Characteristics of MOS Capacitors Containing Nanosized High-κ Ta₂O₅ Dielectrics

Table 2

Equivalent oxide thickness (), flat band voltage () obtained from C-V curves measured at 100 kHz, ideal flat band voltage (), and determined oxide charge ().

Gate	(nm)	(V)	(V)	(10^12 cm^−2)
Al	2.27	−0.91	−0.59	2.8
W	2.71	−0.86	−0.29	4.6
Au	3.44	−0.78	0.18	6.0