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Advances in Materials Science and Engineering
Volume 2018, Article ID 6158096, 5 pages
https://doi.org/10.1155/2018/6158096
Research Article

Novel Low-Permittivity (Mg1−xCux)2SiO4 Microwave Dielectric Ceramics

1Faculty of Science, Xi’an Aeronautical University, No. 259, West 2nd Ring, Xi’an 710077, China
2School of Physics and Information Technology, Shaanxi Normal University, Xi’an 710062, China
3Surface and Interface Science Laboratory, RIKEN, 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan

Correspondence should be addressed to Chengxi Hu; moc.361@ixgnehcuh

Received 22 November 2017; Revised 5 January 2018; Accepted 1 March 2018; Published 26 March 2018

Academic Editor: Francesco Ruffino

Copyright © 2018 Chengxi Hu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The effects of B2O3–LiF addition on the phase composition, microstructures, and microwave dielectric properties of (Mg0.95Cu0.05)2SiO4 ceramics fabricated by a wet chemical method were studied in detail. The B2O3–LiF was selected as liquid-phase sintering aids to reduce the densification sintering temperature of (Mg0.95Cu0.05)2SiO4 ceramics. The B2O3 6%–Li2O 6%-modified (Mg0.95Cu0.05)2SiO4 ceramics sintered at 1200°C possess good performance of  ∼ 4.37,  ∼ 36,700 GHz and  ∼ −42 ppm/°C.