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Advances in Materials Science and Engineering
/
2018
/
Article
/
Fig 2
/
Research Article
Novel Low-Permittivity (Mg
1−
x
Cu
x
)
2
SiO
4
Microwave Dielectric Ceramics
Figure 2
The variation of bulk density of (Mg
0.95
Cu
0.05
)
2
SiO
4
with 12% B
2
O
3
–LiF sintered at (a) 1000°C, (b) 1050°C, (c) 1100°C, (d) 1150°C, and (e) 1200°C.
