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Advances in Materials Science and Engineering
Volume 2018 (2018), Article ID 8797031, 10 pages
https://doi.org/10.1155/2018/8797031
Research Article

Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

Physical-Technical Institute, Scientific Association “Physics-Sun”, Uzbek Academy of Sciences, Bodomzor yo’li 2B, Tashkent 100084, Uzbekistan

Correspondence should be addressed to Kh. N. Juraev; moc.liamg@ilatammihk

Received 30 October 2017; Accepted 1 January 2018; Published 28 February 2018

Academic Editor: Marco Cannas

Copyright © 2018 I. G. Atabaev and Kh. N. Juraev. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

I. G. Atabaev and Kh. N. Juraev, “Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron,” Advances in Materials Science and Engineering, vol. 2018, Article ID 8797031, 10 pages, 2018. doi:10.1155/2018/8797031