Advances in Materials Science and Engineering / 2018 / Article / Fig 2

Research Article

Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

Figure 2

Distribution of NB in 4H-SiC<B> crystal after diffusion at 1300°C, measured by spreading resistance method on the angle polished sample [38].

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.