Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

<div>Distribution of NB in 4H-SiC&lt;B&gt; crystal after diffusion at 1300°C, measured by spreading resistance method on the angle polished sample [<a href="/journals/amse/2018/8797031/#B38">38</a>].</div>

Advances in Materials Science and Engineering

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Figure 2: Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron