Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

<div>Current-voltage characteristics of p-i-n junction in 4H-SiC&lt;B&gt; samples.</div>

Advances in Materials Science and Engineering

Figure 4: Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron