Advances in Materials Science and Engineering / 2018 / Article / Fig 9

Research Article

Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

Figure 9

The results of computer fitting to experimental data on impedance at direct (a and b) and at reverse voltage (c and d) for some samples.
(a)
(b)
(c)
(d)

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