Advances in Materials Science and Engineering / 2018 / Article / Fig 9

Research Article

Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

Figure 9

The results of computer fitting to experimental data on impedance at direct (a and b) and at reverse voltage (c and d) for some samples.

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.