Structural, Optical, and Electrical Characterization of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

<div>(a) Film thickness dependence on the substrate temperature at fluxes of 1.5 and 1.0 sccm; (b) dispersion curves of the refractive index.</div>

Advances in Materials Science and Engineering

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Figure 2

Figure 2: Structural, Optical, and Electrical Characterization of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing 

Figure 2 | Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing 