Advances in Materials Science and Engineering / 2018 / Article / Fig 3

Research Article

Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

Figure 3

XRD spectra of β-Ga2O3 films grown on sapphire at power of 300 W and flux of 1.5 sccm.