Structural, Optical, and Electrical Characterization of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

<div>XRD spectra of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> films grown on sapphire at power of 300 W and flux of 1.5 sccm.</div>

Advances in Materials Science and Engineering

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Figure 3

Figure 3: Structural, Optical, and Electrical Characterization of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing 

Figure 3 | Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing 