Advances in Materials Science and Engineering / 2018 / Article / Fig 4

Research Article

Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

Figure 4

High-resolution rocking curves corresponding to <−402> plane of β-Ga2O3 of films grown at 650, 700, and 750°C at fluxes of 1.0 and 1.5 sccm.