Structural, Optical, and Electrical Characterization of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

<div>UV-Vis spectra of sapphire substrate (circles) and <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films grown at 700°C with RF plasma power of 200 and 300 W (squares and triangles) and at 750°C at the same powers (diamonds and crosses).</div>

Advances in Materials Science and Engineering

fig5

Figure 5

Figure 5: Structural, Optical, and Electrical Characterization of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing 

Figure 5 | Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing 