Advances in Materials Science and Engineering / 2018 / Article / Fig 5

Research Article

Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

Figure 5

UV-Vis spectra of sapphire substrate (circles) and β-Ga2O3 thin films grown at 700°C with RF plasma power of 200 and 300 W (squares and triangles) and at 750°C at the same powers (diamonds and crosses).