Structural, Optical, and Electrical Characterization of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

<div>Dark current and photocurrent measured under 245 nm UV illumination. The inset figure shows I-V characteristics measured using SMU1 as “Force” at positive and as “Ground” at negative voltages.</div>

Advances in Materials Science and Engineering

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Figure 8

Figure 8: Structural, Optical, and Electrical Characterization of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing 

Figure 8 | Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing 