Advances in Materials Science and Engineering / 2018 / Article / Fig 8

Research Article

Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

Figure 8

Dark current and photocurrent measured under 245 nm UV illumination. The inset figure shows I-V characteristics measured using SMU1 as “Force” at positive and as “Ground” at negative voltages.