Structural, Optical, and Electrical Characterization of β-Ga₂O₃ Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

Table 2

Optical bandgaps of β-Ga₂O₃ thin films grown at 300 W at different temperatures and oxygen fluxes.

Growth temperature (°C)	O2 flux (sccm)	(eV)
650	1.0	4.84
700	1.0	4.73
750	1.0	4.88
650	1.5	4.82
700	1.5	4.84
750	1.5	4.88