Advances in Materials Science and Engineering / 2018 / Article / Tab 2

Research Article

Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

Table 2

Optical bandgaps of β-Ga2O3 thin films grown at 300 W at different temperatures and oxygen fluxes.

Growth temperature (°C)O2 flux (sccm) (eV)

6501.04.84
7001.04.73
7501.04.88
6501.54.82
7001.54.84
7501.54.88