High Reliability and Fast-Speed Phase-Change Memory Based on Sb<sub>70</sub>Se<sub>30</sub>/SiO<sub>2</sub> Multilayer Thin Films

<div>XRD patterns of thin films annealed at different temperatures for 10 min in Ar atmosphere: (a) SbSe and (b) SbSe (1 nm) SiO (9 nm).</div>

Advances in Materials Science and Engineering

Figure 4: High Reliability and Fast-Speed Phase-Change Memory Based on Sb<sub>70</sub>Se<sub>30</sub>/SiO<sub>2</sub> Multilayer Thin Films 