Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

<div>Results of photoluminescence (PL) measurements for two different samples, each with just 1 QD layer, but double-layer barriers. Each barrier is made from a 10 nm or 20 nm thick GaAs capsule layer, respectively, and an Al<sub>0.9</sub>Ga<sub>0.1</sub>As (<i>x</i> = 0.9!) layer of a thickness of 100 nm. The QD layer has been grown as described above.</div>

Advances in Materials Science and Engineering

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Figure 10

Figure 10: Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers 