Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

<div>Electronic/hole QD energies and bulk material band edges for three QD heterostructures with different Al contents <i>x</i> in the single-layer barriers (flat band conditions including stress/strain). Pyramidal QDs with 25 nm base width and 3 nm height are assumed.</div>

Advances in Materials Science and Engineering

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Figure 2

Figure 2: Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers 