Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

<div>Simulated emission wavelength for different uncoupled QD sizes and Sb contents (1 − <i>y</i>) within the GaAs<sub><i>y</i></sub>Sb<sub>1-<i>y</i></sub> QDs on GaAs substrate. The wavelength is above 1.3 <i>µ</i>m for Sb contents of 55% and more.</div>

Advances in Materials Science and Engineering

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Figure 5

Figure 5: Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers 