Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

<div>Energy level/band diagram of a GaAs<sub>0.5</sub>Sb<sub>0.5</sub> QD in between pure GaAs capsule layers, and those in between Al<sub>0.9</sub>Ga<sub>0.1</sub>As layers (flat band conditions including stress/strain). Now electrons have a bound state due to the GaAs-layers. The capsule layers are assumed to have a thickness of 20 nm each. For the QDs a pyramidal shape and a base width of 25 nm and a height of 3 nm are assumed.</div>

Advances in Materials Science and Engineering

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Figure 7

Figure 7: Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers 