Active and Passive Electronic Components

Active and Passive Electronic Components / 1976 / Article

Open Access

Volume 3 |Article ID 283768 | https://doi.org/10.1155/APEC.3.85

C. R. Tellier, A. J. Tosser, "Resistivity Recovery of Thin Sputtered Aluminium Films", Active and Passive Electronic Components, vol. 3, Article ID 283768, 5 pages, 1976. https://doi.org/10.1155/APEC.3.85

Resistivity Recovery of Thin Sputtered Aluminium Films

Received05 May 1976

Abstract

Aluminium films were r.f. sputtered onto vycor slides. Annealing induces a decrease of resistivity at temperatures between 300 K and 414 K. Isothermal resistance recovery occurs with a constant rate depending on the annealing temperature; the activation energy increases from 0.3 eV to 0.4 eV for increasing thickness. The resistivity recovery is attributed to a surface reordering phenomenon, which is in good agreement with the Mayadas–Shatzkes conduction occuring in these polycrystalline films, with a thickness independent mean grain diameter. Reflections on grain boundaries are independent of ageing, whereas the reflection coefficient on the upper surface is increased.

Copyright © 1976 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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