C. R. Tellier, A. J. Tosser, "Resistivity Recovery of Thin Sputtered Aluminium Films", Active and Passive Electronic Components, vol. 3, Article ID 283768, 5 pages, 1976. https://doi.org/10.1155/APEC.3.85
Resistivity Recovery of Thin Sputtered Aluminium Films
Aluminium films were r.f. sputtered onto vycor slides. Annealing induces a decrease of resistivity at temperatures between 300 K and 414 K. Isothermal resistance recovery occurs with a constant rate depending on the annealing temperature; the activation energy increases from 0.3 eV to 0.4 eV for increasing thickness. The resistivity recovery is attributed to a surface reordering phenomenon, which is in good agreement with the Mayadas–Shatzkes conduction occuring in these polycrystalline films, with a thickness independent mean grain diameter. Reflections on grain boundaries are independent of ageing, whereas the reflection coefficient on the upper surface is increased.
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