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ElectroComponent Science and Technology
Volume 4 (1977), Issue 3-4, Pages 139-142

Thin Film Integrated RC-Networks With Compensated Temperature Coefficients of R and C

Siemens AG, Koppstraße 6, München 70 D-8000, Germany

Received 1 May 1977

Copyright © 1977 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Thin film integrated RC-networks can be prepared from two non reactively sputtered TaAl films, the properties and optimum compositions of which have been found. Temperature compensation of the integrated resistors and capacitors is achieved by adjusting the temperature coefficient of capacitance. A duplex dielectric capacitor structure is used with anodically formed TaAl-oxide and a sputtered SiO2 layer. Temperature coefficient of capacitance, dielectric loss and capacitance density have been measured vs. SiO2 thickness. Because of almost linear dependences on temperature of both the TaAl resistors and the TaAl-oxide/SiO2-capacitors, such RC-networks show temperature compensation over a wide temperature range, the TCC being +110 ppm/K and the TCR −110 ppm/K.