Active and Passive Electronic Components

Active and Passive Electronic Components / 1984 / Article

Open Access

Volume 11 |Article ID 274825 | https://doi.org/10.1155/APEC.11.123

N. C. Halder, R. J. Snyder, "Measurement of the Tunneling and Hopping Parameters in RuO2 Thick Films", Active and Passive Electronic Components, vol. 11, Article ID 274825, 14 pages, 1984. https://doi.org/10.1155/APEC.11.123

Measurement of the Tunneling and Hopping Parameters in RuO2 Thick Films

Received14 Jul 1982
Accepted10 Mar 1983

Abstract

Thick film resistors containing a mixture of ruthenium oxide (RuO2) and lead borosilicate (Pb5B2SiO10) have been produced on alumina [(Al2O3)·96(MgO)·04] substrates. The temperature coefficient of resistivity (TCR) of these films has been measured for different particle size and concentration (weight percentage) of the conductor particles. The TCR was found to be a function of temperature in all the films included here. From the measured values of negative TCR the tunneling parameter α and hopping parameter β were determined. These results suggest that hopping is important for the low concentration films. For films with positive TCR only parameter α could be determined. The parameter α increased but the parameter β decreased with temperature for the present films.

Copyright © 1984 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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