N. C. Halder, R. J. Snyder, "Measurement of the Tunneling and Hopping Parameters in RuO2 Thick Films", Active and Passive Electronic Components, vol. 11, Article ID 274825, 14 pages, 1984. https://doi.org/10.1155/APEC.11.123
Measurement of the Tunneling and Hopping Parameters in RuO2 Thick Films
Thick film resistors containing a mixture of ruthenium oxide (RuO2) and lead borosilicate (Pb5B2SiO10) have been produced on alumina substrates. The temperature coefficient of resistivity (TCR) of these films has been measured for different particle size and concentration (weight percentage) of the conductor particles. The TCR was found to be a function of temperature in all the films included here. From the measured values of negative TCR the tunneling parameter and hopping parameter were determined. These results suggest that hopping is important for the low concentration films. For films with positive TCR only parameter could be determined. The parameter increased but the parameter decreased with temperature for the present films.
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