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ElectroComponent Science and Technology
Volume 11 (1984), Issue 2, Pages 185-190

Model for Reliability Prediction of Thick Film Resistors

1On leave of absence at Loughborough University of Technology from the Higher Institute of Mechanical and Electrical Engineering, Telecommunication Department, Sofia 1156, Bulgaria
2Department of Electronic and Electrical Engineering, Loughborough University of Technology, Leicestershire, Loughborough, UK

Copyright © 1984 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A model for time-to-failure prediction based on component parameter drift is described. The idea for creation of this model is based on the influence of time-dependent random and non random factors on the distribution of the random variable.

The reliability interpretation of the data from thick film resistor ageing tests has been completed with the model developed. Two different drift functions are described for two ruthenium-based thick film methods with equal resistivity – 10Ω/square. The values of the functional parameters depend strongly on the storage test temperature. Mean time-to-failure decreases approximately 4 times with an increase of storage temperature of 20 deg. C.