The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors
The construction method of the sensor SRTS with two roundshaped diffusion layers is given. The effect of geometry on the sensor resistance is determined theoretically. An approximating method is given to determine the temperature dependence of the sensor in the range of 200K < T < 400K. Calculated results are compared to measurements.
Copyright © 1989 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.