The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors

Pásztor, Gy.; Berkecz, J.; Ficza, N. M.

doi:https://doi.org/10.1155/1989/43536

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Volume 13 | Article ID 043536 | https://doi.org/10.1155/1989/43536

The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors

Gy. Pásztor,¹J. Berkecz,¹and N. M. Ficza¹

Received31 May 1988

Accepted30 Sept 1988

Abstract

The construction method of the sensor SRTS with two roundshaped diffusion layers is given. The effect of geometry on the sensor resistance is determined theoretically. An approximating method is given to determine the temperature dependence of the sensor in the range of 200K < T < 400K. Calculated results are compared to measurements.

Copyright

Copyright © 1989 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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