A suitable short-time test for analysis of long term stability is presented for the case of
passivated NiCr thin film resistors revealing an aging characteristic which is not of Arrhenius
type. Based on the in-situ measurement of resistance change during a continuous temperature
rise, so-called temperature ramp curve, a well-defined correlation is found between the film
stability and a characteristic temperature Tp where the temperature ramp curve exhibits a
maximum. In this way, a reliable prediction of the long term stability can be made within
only a few hours. The influence of the heating rate on the characteristic temperature Tp is
shown. Furthermore, it is experimentally proved that the values of Tp are not essentially
determined by the reversible resistance changes due to differential temperature coefficient of
resistance, but indeed by irreversible aging processes.

R.  Riesenberg

H.  Dintner

A New Stability Test for Passivated NiCr Thin Film Resistors

The construction method of the sensor SRTS with two roundshaped diffusion layers is given.
The effect of geometry on the sensor resistance is determined theoretically. An approximating
method is given to determine the temperature dependence of the sensor in the range of
200K &#x3C; T &#x3C; 400K. Calculated results are compared to measurements.

Gy. P&#xE1;sztor

J. Berkecz

N. M. Ficza

The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors

Z. Porada

E. Schabowska-Osiowska

Thin Film PC-EL Type System with Chopper in the Path of Optical Feedback

Umesh  Kumar

Sushil Kumar Shukla

  Amiete

Analytical Study of Inductor Simulation Circuits

Superconducting thick films of the Y-Ba-Cu-O system prepared by screen-printing and
sintering on different substrates were investigated to study the effect of the substrate
material on the superconducting properties of the films. These properties were determined
by carrying out structural studies using SEM, EPMA and XRD and by
determining the electrical resistivity. The effect of diffusion barrier layers between the
film and the substrate on the superconducting properties of the film was also studied.
The onset temperature of superconductivity in <mml:math id="E1" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mrow><mml:mtext>YBa</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mtext>Cu</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mtext>O</mml:mtext><mml:mrow><mml:mn>7</mml:mn><mml:mo>−</mml:mo><mml:mi>δ</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math> (123) superconducting
thick film was around 92 K on almost all the substrates. The substrate material had an
influence on the temperature at which zero resistance (i.e. Tc) was attained. This
varied from 85 K on yttrium stabilized zirconium oxide (YSZ) and nickel substrates
down to below 70 K on other substrates. Nickel offered promise as being a good
diffusion barrier between the substrate and the 123 superconducting thick film because
the reactions between the film and nickel occurred slowly and did not impair the
superconducting properties of the film. In the case of alumina substrates, there was a
rapid reaction which took place at high annealing temperatures. A BaAl2O4 phase was
found between the film and the alumina substrate which promoted adhesion but
resulted in poor superconducting properties of the film.

T. Kokkomäki

A. Uusimäki

R. Rautioaho

J. Levoska

T. Murtoniemi

S. Leppävuori

Screen-Printed Superconducting Y-Ba-Cu-O Thick Films on Various Substrates

Knowledge on the conduction mechanism of thick film resistors are limited and often
contradictory.In this paper investigations based on temperature dependent 1/f noise measurements
are reported.

A.  Ambr&#243;zy

E.  Hahn

L. B. Kiss

G.  Tref&#225;n

Study of Thick Film Resistors By 1/f Noise Measurements

Two strategies to solve the problem of instability of photoanodes against photocorrosion
have been explored. The photocorrosion of photoanodes generally occurs when
they enter the fabrication of efficient photoelectrochemical cells (i.e. showing high
values of the open circuit voltage and photocurrent density).One of these strategies consists of protecting the photoanode against photocorrosion
by a non-conducting oxide film deposited on its surface. The oxide must have a
cationic valence band, or valence energy states, falling either above, or at the same
level as, the top of the valence band of the anode. The significant photocurrent
observed with the n-GaAs/Sr0.98Na0.01Ce0.01TiO3 hybridelectrode structure confirms the validity of the model.The second possibility deals with the protection of the photoanode by a conducting
oxide film in which the carrier transport occurs, close to the Fermi level, via either a
partially filled band or a sufficiently high density of localized states. We have illustrated
this method of protection by depositing n-SrTiO3 on n-GaAs. The n-SrTiO3 films have
the Fermi level pinned within the forbidden band by Ti:3d(t2g) energy states. The
corresponding electrochemical cells exhibit photoconversion efficiency as high as 18%
for an illumination of 5 mW/cm2.

G. Campet

J. P. Manaud

C. Puprichitkun

Z. W. Sun

P. Salvador

Protection of Photoanodes Against Photo-Corrosion by Surface Deposition of Oxide Films: Criteria for Choosing the Protective Coating

Some technological aspects and basic parameters of nickel thin film gas flow sensors
are presented. Thermal conditions of sensors are described by the mechanisms of heat
transfer. Typical characteristics measured during the sensor operation are given.

T. M. Berlicki

E.  Murawski

S. J. Osadnik

E. L. Proci&#242;w

Thermoresistive Thin Film Flow Sensor

Dynamic Characteristics of a Thin Film PC-EL System with Optical Feedback

The evolution of microstructure and electrical properties of silver-based thick-film
metallizations of silicon solar cells prepared by infrared firing processes has been
investigated. The performance of the cells are shown to be dependent on several
dynamical and diffusive phenomena. In particular, the sintering of silver grains, silver
diffusion into the glass, and the flow of glass at the metal/silicon interface strongly
affect important characteristics of the cells such as sheet and contact resistivities and
the adhesion of fingers and bus bars. The existance of an optimum value of the peak
firing temperature is observed and explained in terms of competitive phenomena
occurring at the metal/silicon interface. Moreover it is shown that IR firing treatments
require a careful consideration of the sequence of printing and firing steps. The
features of heat treatments performed in conveyor belt furnances using Joule and
infrared sources are compared.

M. Prudenziati

L. Moro

B. Morten

F. Sirotti

L. Sardi

AG-Based Thick-Film Front Metallization of Silicon Solar Cells

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Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

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Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

Active and Passive Electronic Components