Research Article

SiGe HBTs Optimization for Wireless Power Amplifier Applications

Table 1

BVCEOand maximum value obtained for different SIC characteristics.

SIC dose implant (cm−2)2.10121.10121.1012
SIC energy implant (keV)400400500
BVCEO (V)7.237.928.03
(GHz) @  V25.3120.5319.53