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Active and Passive Electronic Components
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Special Issues
Active and Passive Electronic Components
/
2012
/
Article
/
Tab 1
/
Research Article
Comprehension of Postmetallization Annealed MOCVD-
on
Treated III-V Semiconductors
Table 1
Electrical characteristics by PMA(350°C)-TiO
2
/InP and PMA(350°C)-TiO
2
/GaAs.
MOS structures
Dielectric constant
Leakage current at 1 MV/cm
Interface state density
of hysteresis loop
PMA(350°C)-TiO
2
/S-InP
44
2.7 × 10
−7
and 2.3 × 10
−7
A/cm
2
7.13 × 10
11
cm
−2
eV
−1
17 mV
PMA(350°C)-TiO
2
/S-GaAs
66
9.7 × 10
−8
and 1.4 × 10
−7
5.96 × 10
11
cm
−2
eV
−1
9 mV