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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 493239, 4 pages
Research Article

A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

1Department of Electrical and Computer Engineering, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433, USA
2Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433, USA
3Defense and Power Business Unit, RF Micro Devices, Inc., Charlotte, NC 28269, USA

Received 21 March 2012; Revised 10 July 2012; Accepted 28 July 2012

Academic Editor: Jung-Hui Tsai

Copyright © 2012 Bradley D. Christiansen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.