A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

Figure 2

Gate diode curves during the stressing. Insets show additional detail for regions of interest of the same curves as the main plot and share the same units (i.e., mA/mm and V) as the main figure. The data were collected at stress times represented in Figure 1. Black curves represent the initial 𝑉_𝐺 = +2.5 V gate stresses. Red curves represent the gate voltage stress ramps of increasing magnitude collected just prior to the red curves of Figure 1. Green curves are gate voltage stress ramps collected just after the total stress times represented by the green curves of Figure 1.