Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs

<table>Representation of the gate-to-channel capacitance <svg height="15.725" id="M186" style="vertical-align:-3.41936pt" version="1.1" viewbox="0 0 29.15 15.725" width="29.15" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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t325.5 101.5q114 0 204 -38z" id="x1D436"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.05,15.475)"><path d="M692 302v-28q-45 -6 -54.5 -17t-9.5 -55v-86q0 -62 7 -95q-7 -2 -32 -7.5l-37 -8l-35.5 -7.5t-40.5 -7t-38.5 -4t-40.5 -2q-165 0 -266 93t-101 243q0 84 32 151t86 108t121.5 63t142.5 22q29 0 62.5 -4t52 -7.5t47.5 -10.5t31 -7l15 -156l-28 -6q-17 87 -66.5 121.5
t-128.5 34.5q-117 0 -191 -80.5t-74 -216.5q0 -56 17 -110t49.5 -100.5t87.5 -74.5t124 -28q53 0 87 17q17 9 24.5 23t7.5 43v85q0 54 -15.5 67.5t-89.5 18.5v28h254z" id="x47"></path></g><g transform="matrix(.012,-0,0,-.012,20.558,15.475)"><path d="M614 175l29 -10q-33 -109 -57 -154q-121 -26 -184 -26q-90 0 -160.5 29t-112.5 77t-63.5 105.5t-21.5 119.5q0 157 108 253t277 96q36 0 71.5 -5t69 -13.5t36.5 -8.5q15 -102 20 -150l-29 -8q-20 79 -66.5 114t-128.5 35q-119 0 -187.5 -86t-68.5 -207
q0 -140 73.5 -227.5t188.5 -87.5q73 0 119.5 37.5t86.5 116.5z" id="x43"></path></g>
</svg> as a function of the <svg height="15.4375" id="M187" style="vertical-align:-3.41936pt" version="1.1" viewbox="0 0 27.512501 15.4375" width="27.512501" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><path d="M692 302v-28q-45 -6 -54.5 -17t-9.5 -55v-86q0 -62 7 -95q-7 -2 -32 -7.5l-37 -8l-35.5 -7.5t-40.5 -7t-38.5 -4t-40.5 -2q-165 0 -266 93t-101 243q0 84 32 151t86 108t121.5 63t142.5 22q29 0 62.5 -4t52 -7.5t47.5 -10.5t31 -7l15 -156l-28 -6q-17 87 -66.5 121.5
t-128.5 34.5q-117 0 -191 -80.5t-74 -216.5q0 -56 17 -110t49.5 -100.5t87.5 -74.5t124 -28q53 0 87 17q17 9 24.5 23t7.5 43v85q0 54 -15.5 67.5t-89.5 18.5v28h254z" id="x47"></path></g><g transform="matrix(.012,-0,0,-.012,21.183,15.187)"><path d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" id="x53"></path></g>
</svg> voltage for UTB and NSB devices (at 100 kHz and 1 MHz).</table>

Active and Passive Electronic Components

fig11

Figure 11

Figure 11: Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs 