Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs
Figure 5
Extracted transconductance and effective mobility versus for four NSB devices (dices E15, C12, G15, and C03) having a channel thickness () of 1.6, 2.4, 2.9, and 4.9 nm, respectively. is extracted from Figure 4 as the slope of the - for positive .
