p-type (1015 cm−3) regular transistor channel in UTB devices and nonreduced SOI in NSB devices (source-drain extensions)
03b
Gate-recessed silicon
GRS
1.6–6.5 range
Thinned transistor channel in NSB devices
03c
Pad oxide
PAD OX
15
Relieve stress from silicon to nitride at high temperature
04
Gate oxide
GOX
26
Gate insulator
05
Polysilicon
Poly
220
Gate electrode
06
Nitride 2
Nit
30
Prevent further oxidation of the thin silicon layer during the implant's thermal annealing (NSB)
07
Field oxide
FOX
700
Active area insulator
08
Silox
SOX
350
Contact opening mask for source/drain and gate passivation
09
Polysilicon
Poly
220
Source/drain polycontacts Source/drain doping obtained by phosphorous implant Dose D = 2.5 1015 cm−2Energy E = 30 keV HTA High temperature annealing T = 1000°C, (30 min)